PDTB123E Datasheet, PDF (2/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

NXP Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3.
Pin
SOT54
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
SOT54 variant
1
input (base)
2
output (collector)
3
GND (emitter)
SOT23, SOT346
1
input (base)
2
GND (emitter)
3
output (collector)
Simplified outline Symbol
1
2
3
001aab347
2
R1
1
R2
3
006aaa148
1
2
3
001aab348
2
R1
1
R2
3
006aaa148
1
2
3
001aab447
2
R1
1
R2
3
006aaa148
3
1
2
006aaa144
3
R1
1
R2
2
sym003
PDTB123E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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