PDTB123E Datasheet, PDF (3/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

NXP Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
3. Ordering information
4. Marking
Table 4. Ordering information
Type number Package
Name Description
PDTB123EK
SC-59A plastic surface mounted package; 3 leads
PDTB123ES^[1] SC-43A plastic single-ended leaded (through hole) package;
3 leads
PDTB123ET
-
plastic surface mounted package; 3 leads
Version
SOT346
SOT54
SOT23
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
Table 5. Marking codes
Type number
PDTB123EK
PDTB123ES
PDTB123ET
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
E2
B123ES
*7S
PDTB123E_SER_2
Product data sheet
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V_CBO
V_CEO
collector-base voltage
collector-emitter voltage
open emitter
open base
-
−50
V
-
−50
V
V_EBO
emitter-base voltage
open collector
-
−10
V
V_I
input voltage
positive
-
+10
V
negative
-
−12
V
I_O
output current (DC)
-
−500
mA
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT346
[1] _-
250
mW
SOT54
[1] _-
500
mW
SOT23
[1] _-
250
mW
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
−65
+150
°C
-
150
°C
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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