M36L0R7060T1 Datasheet, PDF (12/22 Pages) STMicroelectronics – 128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package

Signal descriptions
M36L0R7060T1, M36L0R7060B1
2.19
V_DDQF supply voltage
V_DDQF provides the power supply for the Flash I/O pins. This allows all outputs to be
powered independently of the Flash core power supplies, V_DDF and V_CCP.
2.20
V_PPF Program supply voltage
V_PPF is both a Flash control input and a Flash power supply pin. The two functions are
selected by the voltage range applied to the pin.
If V_PPF is kept in a low voltage range (0V to V_DDQF) V_PPF is seen as a control input. In this
case a voltage lower than V_PPLK gives an absolute protection against Program or Erase,
while V_PP in the V_PP1 range enables these functions (see the M58LR128HTB datasheet for
the relevant values). V_PPF is only sampled at the beginning of a Program or Erase; a change
in its value after the operation has started does not have any effect and Program or Erase
operations continue.
If V_PPF is in the range of V_PPH it acts as a power supply pin. In this condition V_PPF must be
stable until the Program/Erase algorithm is completed.
2.21
Note:
V_SS ground
V_SS is the common ground reference for all voltage measurements in the Flash (core and
I/O buffers) and PSRAM chips. It must be connected to the system ground.
Each Flash memory device in a system should have their supply voltage (V_DDF) and the
program supply voltage V_PPF decoupled with a 0.1 µF ceramic capacitor close to the pin
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See Figure 5: AC measurement load circuit. The PCB track widths should be
sufficient to carry the required V_PPF program and erase currents.
12/22