English
Language : 

COP410L Datasheet, PDF (7/20 Pages) National Semiconductor (TI) – Single-Chip N-Channel Microcontrollers
Timing Diagrams
FIGURE 3 Input Output Timing Diagrams (Ceramic Resonator Divide-by-8 Mode)
TL DD 6919 – 4
FIGURE 3a Synchronization Timing
TL DD 6919 – 5
Functional Description
A block diagram of the COP410L is given in Figure 1 Data
paths are illustrated in simplified form to depict how the vari-
ous logic elements communicate with each other in imple-
menting the instruction set of the device Positive logic is
used When a bit is set it is a logic ‘‘1’’ (greater than 2V)
When a bit is reset it is a logic ‘‘0’’ (less than 0 8V)
All functional references to the COP410L COP411L also
apply to the COP310L COP311L
PROGRAM MEMORY
Program Memory consists of a 512-byte ROM As can be
seen by an examination of the COP410L 411L instruction
set these words may be program instructions program data
or ROM addressing data Because of the special character-
istics associated with the JP JSRP JID and LQID instruc-
tions ROM must often be thought of as being organized into
8 pages of 64 words each
ROM addressing is accomplished by a 9-bit PC register Its
binary value selects one of the 512 8-bit words contained in
ROM A new address is loaded into the PC register during
each instruction cycle Unless the instruction is a transfer of
control instruction the PC register is loaded with the next
sequential 9-bit binary count value Two levels of subroutine
nesting are implemented by the 9-bit subroutine save regis-
ters SA and SB providing a last-in first-out (LIFO) hard-
ware subroutine stack
ROM instruction words are fetched decoded and executed
by the Instruction Decode Control and Skip Logic circuitry
DATA MEMORY
Data memory consists of a 128-bit RAM organized as 4
data registers of 8 4-bit digits RAM addressing is imple-
mented by a 6-bit B register whose upper 2 bits (Br) select 1
of 4 data registers and lower 3 bits of the 4-bit Bd select 1 of
8 4-bit digits in the selected data register While the 4-bit
contents of the selected RAM digit (M) is usually loaded into
or from or exchanged with the A register (accumulator) it
may also be loaded into the Q latches or loaded from the L
ports RAM addressing may also be performed directly by
the XAD 3 15 instruction The Bd register also serves as a
source register for 4-bit data sent directly to the D outputs
The most significant bit of Bd is not used to select a RAM
digit Hence each physical digit of RAM may be selected by
two different values of Bd as shown in Figure 4 below The
skip condition for XIS and XDS instructions will be true if Bd
changes between 0 and 15 but NOT between 7 and 8 (see
Table III)
Can be directly addressed by
LBI instruction (see Table III)
TL DD 6919 – 6
FIGURE 4 RAM Digit Address to
Physical RAM Digit Mapping
7