SM5010_06 Datasheet, PDF (8/25 Pages) Nippon Precision Circuits Inc – Crystal Oscillator Module ICs

SM5010 series
Electrical Characteristics
5010AN×, BN×, DN× series
3V operation: V_DD = 2.7 to 3.6V, V_SS = 0V, Ta = −10 to +70°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
V_OH Q: Measurement cct 1, V_DD = 2.7V, I_OH = 8mA
V_OL Q: Measurement cct 2, V_DD = 2.7V, I_OL = 8mA
V_IH INHN
V_IL INHN
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 3.6V
V_OH = V_DD
V_OL = V_SS
5010×N1
I_DD
Measurement cct 3, load cct 1,
INHN = open, C_L = 15pF, f = 30MHz
5010×N2
5010×N3
5010×N4
5010×N5
R_UP2 Measurement cct 4
R_f Measurement cct 5
R_D Design value
5010B××
5010A××
C_G
Design value. A monitor pattern on a ^{5010B××}
wafer is tested.
C_D
5010A××
5010B××
Rating
Unit
min
typ
max
2.1
2.4
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.5
V
–
–
10
µA
–
–
10
–
5
10
–
3.5
7
–
2.5
5
mA
–
2
4
–
2
4
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
26
29
32
20
22
24
pF
26
29
32
20
22
24
5010AN×, AK×, BN×, BK×, DN× series
5V operation: V_DD = 4.5 to 5.5V, V_SS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
V_OH Q: Measurement cct 1, V_DD = 4.5V, I_OH = 16mA
V_OL Q: Measurement cct 2, V_DD = 4.5V, I_OL = 16mA
V_IH INHN
V_IL INHN
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 5.5V
V_OH = V_DD
V_OL = V_SS
5010×N1
Measurement cct 3, load cct 1,
I_DD
INHN = open, C_L = 50pF, f = 30MHz
5010×N2
5010×N3
5010×N4
5010×N5
Measurement cct 3, load cct 2,
INHN = open, C_L = 15pF, f = 30MHz
R_UP2 Measurement cct 4
R_f Measurement cct 5
5010×K1
R_D Design value
5010B××
5010A××
C_G
Design value. A monitor pattern on a ^{5010B××}
wafer is tested.
C_D
5010A××
5010B××
Rating
Unit
min
typ
max
3.9
4.2
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.8
V
–
–
10
µA
–
–
10
–
15
30
–
9
18
–
6
12
–
5
10
mA
–
5
10
–
10
20
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
26
29
32
20
22
24
pF
26
29
32
20
22
24
SEIKO NPC CORPORATION —8