SM5010_06 Datasheet, PDF (14/25 Pages) Nippon Precision Circuits Inc – Crystal Oscillator Module ICs

SM5010 series
5010FH× series
5V operation: V_DD = 4.5 to 5.5V, V_SS = 0V
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage V_OH Q: Measurement cct 1, V_DD = 4.5V, I_OH = 4mA
3.9
4.2
–
V
LOW-level output voltage
V_OL Q: Measurement cct 2, V_DD = 4.5V, I_OL = 4mA
–
0.3
0.5
V
HIGH-level input voltage
V_IH INHN
2.0
–
–
V
LOW-level input voltage
V_IL INHN
–
–
0.8
V
Output leakage current
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 5.5V
V_OH = V_DD
V_OL = V_SS
–
–
10
µA
–
–
10
5010FHA, FHC
f = 40MHz
–
13
26
Current consumption
I_DD
Measurement cct 3, load cct 1,
INHN = open, C_L = 15pF
5010FHD
f = 50MHz
5010FHE
f = 60MHz
–
15
30
mA
–
17
34
INHN pull-up resistance
R_UP Measurement cct 4
5010FHA
40
100
250
kΩ
3.57
4.2
4.83
Feedback resistance
R_f Measurement cct 5
5010FHC
5010FHD
2.63
3.1
3.57
kΩ
1.87
2.2
2.53
5010FHE
1.87
2.2
2.53
5010FHA
11.7
13
14.3
5010FHC
9.9
11
12.1
C_G
5010FHD
11.7
13
14.3
Built-in capacitance
Design value. A monitor pattern on a ^5010FHE
wafer is tested.
5010FHA
7.2
8
8.8
pF
13.5
15
16.5
5010FHC
15.3
17
18.7
C_D
5010FHD
15.3
17
18.7
5010FHE
13.5
15
16.5
5010HN×, HK× series
5V operation: V_DD = 4.5 to 5.5V, V_SS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
Built-in capacitance
V_OH Q: Measurement cct 1, V_DD = 4.5V, I_OH = 16mA
V_OL Q: Measurement cct 2, V_DD = 4.5V, I_OL = 16mA
V_IH INHN
V_IL INHN
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 5.5V
V_OH = V_DD
V_OL = V_SS
I_DD1
Measurement cct 3, load cct 2,
INHN = open, C_L = 15pF, f = 50MHz
5010HK1
I_DD2
Measurement cct 3, load cct 1,
INHN = open, C_L = 50pF, f = 50MHz
5010HN1
R_UP Measurement cct 4
R_f Measurement cct 5
C_{G Design value. A monitor pattern on a wafer is tested.}
C_D
Rating
Unit
min
typ
max
3.9
4.2
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.8
V
–
–
10
µA
–
–
10
–
20
40
mA
–
25
50
40
100
250
kΩ
80
200
500
kΩ
11.7
13
14.3
pF
15.3
17
18.7
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