SM5010_06 Datasheet, PDF (10/25 Pages) Nippon Precision Circuits Inc – Crystal Oscillator Module ICs

SM5010 series
5010CL× series
3V operation: V_DD = 2.7 to 3.6V, V_SS = 0V, Ta = −20 to +80°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
Standby current
INHN pull-up resistance
Feedback resistance
Built-in capacitance
V_OH Q: Measurement cct 1, V_DD = 2.7V, I_OH = 8mA
V_OL Q: Measurement cct 2, V_DD = 2.7V, I_OL = 8mA
V_IH INHN
V_IL INHN
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 3.6V
V_OH = V_DD
V_OL = V_SS
5010CL1
I_DD
Measurement cct 3, load cct 1,
INHN = open, C_L = 15pF, f = 30MHz
5010CL2
5010CL3
5010CL4
5010CL5
I_ST Measurement cct 6, INHN = LOW
R_UP1
Measurement cct 4
R_UP2
R_f Measurement cct 5
C_G
Design value. A monitor pattern on a wafer is tested.
C_D
Rating
Unit
min
typ
max
2.2
2.4
–
V
–
0.3
0.4
V
0.7V_DD
–
–
V
–
–
0.3V_DD
V
–
–
10
µA
–
–
10
–
5
10
–
3.5
7
–
2.5
5
mA
–
2
4
–
2
4
–
–
5
µA
2
4
15
MΩ
40
100
250
kΩ
80
200
500
kΩ
16
18
20
pF
16
18
20
5V operation: V_DD = 4.5 to 5.5V, V_SS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
Standby current
INHN pull-up resistance
Feedback resistance
Built-in capacitance
V_OH Q: Measurement cct 1, V_DD = 4.5V, I_OH = 16mA
V_OL Q: Measurement cct 2, V_DD = 4.5V, I_OL = 16mA
V_IH INHN
V_IL INHN
I_Z
Q: Measurement cct 2, INHN = LOW,
V_DD = 5.5V
V_OH = V_DD
V_OL = V_SS
5010CL1
I_DD
Measurement cct 3, load cct 1,
INHN = open, C_L = 50pF, f = 30MHz
5010CL2
5010CL3
5010CL4
5010CL5
I_ST Measurement cct 6, INHN = LOW
R_UP1
Measurement cct 4
R_UP2
R_f Measurement cct 5
C_G
Design value. A monitor pattern on a wafer is tested.
C_D
Rating
Unit
min
typ
max
4.0
4.2
–
V
–
0.3
0.4
V
0.7V_DD
–
–
V
–
–
0.3V_DD
V
–
–
10
µA
–
–
10
–
15
30
–
9
18
–
6
12
mA
–
5
10
–
5
10
–
–
10
µA
1
2
8
MΩ
40
100
250
kΩ
80
200
500
kΩ
16
18
20
pF
16
18
20
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