CM200HG-130H Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
500
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 100Ω
400
5000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 100Ω
4000
300
3000
200
2000
100
1000
0
0
2000
4000
6000
8000
COLLECTOR-EMITTER VOLTAGE (V)
0
0
2000
4000
6000
8000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
500
VCC ≤ 4500V, di/dt ≤ 1000A/µs
Tj = 125°C
400
300
200
100
0
0
2000
4000
6000
8000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
8
May 2009