CM200HG-130H Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
Tj = –40°C
5800
VCES
Collector-emitter voltage
VGE = 0V
Tj = +25°C
6300
V
Tj = +125°C
6500
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25°C
± 20
V
IC
Collector current
ICM
DC, Tc = 80°C
Pulse
200
A
(Note 1)
400
A
IE
Emitter current
(Note 2) ^DC
IEM
Pulse
200
A
(Note 1)
400
A
Pc
Maximum power dissipation (Note 3) Tc = 25°C, IGBT part
2900
W
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
10200
V
Ve
Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
5100
V
Tj
Junction temperature
–40 ~ +150
°C
Top
Operating temperature
–40 ~ +125
°C
Tstg
Storage temperature
–40 ~ +125
°C
tpsc
Maximum short circuit pulse width VCC = 4500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
tf2
Eoff(10%)
VEC
trr
trr2
Qrr
Erec(10%)
Item
Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 20 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
Tj = 25°C
Tj = 125°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 3600 V, IC = 200 A, VGE = ±15 V, Tj = 25°C
IC = 200 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs^{(Note 6)}, Inductive load
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(off) = 100 Ω, Tj = 125°C, Ls = 220 nH
Inductive load
IE = 200 A
VGE = 0 V
(Note 4) Tj = 25°C
Tj = 125°C
VCC = 3600 V, IE = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs^{(Note 6)}, Inductive load
Limits
Unit
Min
Typ
Max
—
—
3
mA
—
10
30
5.0
6.0
7.0
V
–0.5
—
0.5
µA
—
41.0
—
nF
—
2.5
—
nF
—
0.7
—
nF
—
3.3
—
µC
—
4.50
—
V
—
4.60
—
—
1.20
—
µs
—
0.35
—
µs
—
1.50
—
J/P
—
8.20
—
µs
—
0.50
—
µs
3.10
—
µs
—
1.20
—
J/P
—
4.00
—
V
—
3.60
—
—
1.00
—
µs
2.40
—
µs
—
370
—
µC
—
0.70
—
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2
May 2009