CM200HG-130H Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
Coes
2
10⁰
7
5
3 _{VGE = 0V, Tj = 25°C}
2 _{f = 100kHz}
10^-₁¹_{0-1 2 3 5 7100 2 3}
5 710¹
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 3600V, IC = 200A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
1
2
3
4
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
4
VCC = 3600V, VGE = ±15V
RG(on) = 30Ω, RG(off) = 100Ω
Tj = 125°C, Inductive load
3
Eon
Eoff
2
1
Erec
0
0
100
200
300
400
500
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
4
VCC = 3600V, IC = 200A
VGE = ±15V, Tj = 125°C
Inductive load
3
2
Eon
Eoff
1
Erec
0
0
50
100
150
200
GATE RESISTOR (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
6
May 2009