CM200HG-130H Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
400
Tj = 125°C
VGE = 20V
300
VGE = 15V
VGE = 12V
VGE = 10V
200
VGE = 8V
TRANSFER CHARACTERISTICS
(TYPICAL)
400
VCE = 20V
300
200
100
100
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE (V)
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
400
VGE = 15V
300
200
100
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
400
300
200
100
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
May 2009