CM200HG-130H Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM200HG-130H
● IC .................................................................. 200 A
● VCES ...................................................... 6500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
73
±0.5
57
±0.25
2-M8 NUTS
(2)
C
C
G
E
E
(1)
CIRCUIT DIAGRAM
22
±0.3
41
±0.3
LABEL
2
TAB #110. T = 0.5
17.4
±0.3
2.8
±0.1
depth
min. 4
1
>PET+PBT<
EG
>PET+PBT<
5
±0.1
21.6
±0.3
C
4-φ7 MOUNTING HOLES
12.9
±0.3
16.2
±0.3
screwing depth
min. 16.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
May 2009