CM200HG-130H Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
10%VGE
0
90%VGE
VGE
VCC
90%IC
10%IC
0
td(on) _tr
ton
t1
IC
10%VCE
VCE
∫ ^t2
Eon = ic·vce dt
t1
t2
di
10%VCE
90%IC
50%IC
10%IC
dt
td(off)
t3
tf2
t4
∫ ^t4
Eoff = ic·vce dt
t3
tf = (0.9ic–0.1ic)/(di/dt)
toff = td(off)+tf
Fig. 1 – Definitions of switching times & energies of IGBT part
IE(IF)
0
di
Irr
0
di/dt
trr
dt
10%VEC
VEC(VR)
10%IE
∫ ^{Qrr = –}
t6
ie dt
0
∫ ^t6
Erec = – ie·vec dt
t5
trr2
0 t5
t6
Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
May 2009