CM200HG-130H Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
10²
7 ^{VCC = 3600V, VGE = ±15V}
5 ^{RG(on) = 30Ω, RG(off) = 100Ω}
Tj = 125°C, Inductive load
3
2
10¹
7
5
3
2 ^tf
10⁰
7
5
3
2 tr
td(off)
td(on)
10^-₁¹ ₀₁
2 3 4 5 7 10²
2 3 4 5 7 10³
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
10²
10⁴
7 ^{VCC = 3600V, VGE = ±15V}
7
5 ^{RG(on) = 30Ω, RG(off) = 100Ω}
5
Tj = 125°C, Inductive load
3
3
2
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^-₁¹ ₀₁
2 3 4 5 7 10²
10³
7
lrr
5
3
2
trr
10²
7
5
3
2
10¹
2 3 4 5 7 10³
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j–c)Q = 42K/kW
Rth(j–c)R = 66K/kW
1.0
0.8
0.6
0.4
0.2
010_{-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101}
TIME (s)
Z Σ R ^1–exp


n
(t) =
th( j –c )
i
t
– _{ti }
i=1
Ri [K/kW]
τi [sec]
1
0.0059
0.0002
2
0.0978
0.0074
3
0.6571
0.0732
4
0.2392
0.4488
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
May 2009