CM150DX-24S Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
100
C_ies
10
1
C_oes
0.1
C_res
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=0 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_rr
100
I_rr
0.01
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
V_CC=600 V, I_C=150 A, T _j =25 °C
20
10
10
100
1000
EMITTER CURRENT I_E (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25°C
1
15
10
5
0
0
100
200
300
400
500
GATE CHARGE Q_G (nC)
0.1
0.01
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
R_th(j-c)Q=0.13 K/W, R_th(j-c)D=0.23 K/W
TIME (S)
8
Feb. 2011