CM150DX-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j =25 °C
300
V_GE=20 V
13.5 V
250 ^{15 V}
12 V
(Chip)
200
11 V
150
10 V
100
9V
50
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T_j =25 °C
10
(Chip)
8
I_C=300 A
I_C=150 A
6
I_C=60 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
(Chip)
3
T_j =150 °C
T_j =125 °C
2.5
2
1.5
T_j =25 °C
1
0.5
0
0
50
100
150
200
250
300
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
1000
T_j =125 °C
100
T_j =150 °C
T_j =25 °C
10
0
1
2
3
EMITTER-COLLECTOR VOLTAGE V_EC (V)
6
Feb. 2011