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| CM150DX-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
td(off)
td(on)
tf
100
tr
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=150 A, VGE=±15 V, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
td(off)
td(on)
tr
tf
100
10
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
100
Eon
Eoff
10
Err
10
1
10
100
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=150 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
100
Eon
Eoff
10
Err
1
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
7
1
0.1
1
10
100
EXTERNAL GATE RESISTANCE RG (â¦)
Feb. 2011
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