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| CM150DX-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)
Symbol
Item
Conditions
VCC
VGEon
RG
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
CHIP LOCATION (top view)
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Min.
Limits
Typ.
Max.
Unit
-
600
850
V
13.5
15.0
16.5
V
0
-
30
â¦
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip.
4
Feb. 2011
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