CM150DX-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
Rating
Unit
V_CES
V_GES
I_C
I_CRM
P_tot
IE
IERM
(Note.1)
(Note.1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, TC=120 °C ^(Note.2)
Pulse, Repetitive ^(Note.3)
TC=25 °C ^{(Note.2, 4)}
TC=25 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
1200
V
±20
V
150
300
A
1150
W
150
A
300
MODULE
Symbol
Item
Conditions
Rating
Unit
T_jmax
T_Cmax
Maximum junction temperature
Maximum case temperature
-
(Note.2)
175
°C
125
T_jop
Operating junction temperature
-
T_stg
Storage temperature
-
-40 ~ +150
°C
-40 ~ +125
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=15 mA, VCE=10 V
-
-
1
mA
-
-
0.5
μA
5.4
6.0
6.6
V
V_CEsat
Collector-emitter saturation voltage
( Terminal)
IC=150 A , ^(Note.5)
VGE=15 V
T _j =25 °C
-
T _j =125 °C
-
T _j =150 °C
-
1.80
2.25
2.00
-
V
2.05
-
V_CEsat
(Chip)
Collector-emitter saturation voltage
IC=150 A , ^(Note.5)
VGE=15 V
T _j =25 °C
-
T _j =125 °C
-
T _j =150 °C
-
C_ies
Input capacitance
-
C_oes
Output capacitance
VCE=10 V, G-E short-circuited
-
C_res
Reverse transfer capacitance
-
Q_G
Gate charge
VCC=600 V, IC=150 A, VGE=15 V
-
t_d(on)
t_r
Turn-on delay time
Rise time
VCC=600 V, IC=150 A, VGE=±15 V,
-
-
t_d(off)
t_f
Turn-off delay time
Fall time
RG=0 Ω, Inductive load
-
-
1.70
2.15
1.90
-
V
1.95
-
-
15
-
3.0
nF
-
0.25
350
-
nC
-
800
-
200
ns
-
600
-
300
V (Note.1)
EC
Emitter-collector voltage
(Terminal)
IE=150 A , ^(Note.5)
G-E short-circuited
T _j =25 °C
-
T _j =125 °C
-
T _j =150 °C
-
V (Note.1)
EC
(Chip)
Emitter-collector voltage
IE=150 A , ^(Note.5)
G-E short-circuited
T _j =25 °C
-
T _j =125 °C
-
T _j =150 °C
-
t (Note.1)
rr
Reverse recovery time
VCC=600 V, IE=150 A, VGE=±15 V,
-
Q (Note.1)
rr
Reverse recovery charge
R_G=0 Ω, Inductive load
-
E_on
Turn-on switching energy per pulse V_CC=600 V, I_C=I_E=150 A,
-
E_off
Turn-off switching energy per pulse V_GE=±15 V, R_G=0 Ω, T _j =150 °C,
-
E (Note.1)
rr
Reverse recovery energy per pulse
Inductive load
-
1.8
2.25
1.8
-
V
1.8
-
1.7
2.15
1.7
-
V
1.7
-
-
300
ns
8.0
-
μC
24.2
-
16.0
-
mJ
12.2
-
R_CC'+EE'
r_g
Internal lead resistance
Internal gate resistance
Main terminals-chip, per switch,
TC=25 °C ^(Note.2)
Per switch
-
-
1.8
mΩ
-
13
-
Ω
2
Feb. 2011