CM150DX-24S Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T _j =25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
Item
Conditions
Limits
Min.
Typ.
R₂₅
Zero-power resistance
TC=25 °C ^(Note.2)
4.85
5.00
ΔR/R
B_(25/50)
P₂₅
Deviation of resistance
B-constant
Power dissipation
TC=100 °C, R100=493 Ω
Approximate by equation
TC=25 °C ^(Note.2)
(Note.6)
-7.3
-
-
3375
-
-
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Conditions
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1 module,
Thermal grease applied ^(Note.7)
Limits
Min.
Typ.
-
-
-
-
-
15
Unit
Max.
5.15
kΩ
+7.8
%
-
K
10
mW
Max.
0.13
0.23
-
Unit
K/W
K/W
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
d_s
Creepage distance
d_a
Clearance
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
M 6 screw
Mounting to heat sink M 5 screw
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
-
On the centerline X, Y ^(Note.8)
Limits
Unit
Min.
Typ.
Max.
3.5
4.0
4.5
N·m
2.5
3.0
3.5
11.55
-
12.32
-
-
mm
-
10.00
-
10.85
-
-
mm
-
-
350
-
g
±0
-
+100
μm
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface (mounting side) of base plate
and heat sink just under the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
Note.4: Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit for V_CEsat, V_EC.
Note.6:
B_{(25 /}
50)

ln(
R ₂₅
R₅₀
) /(
1
T₂₅

1
T₅₀
)
R₂₅: resistance at absolute temperature T₂₅ [K]; T₂₅=25 [°C]+273.15=298.15 [K]
R₅₀: resistance at absolute temperature T₅₀ [K]; T₅₀=50 [°C]+273.15=323.15 [K]
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
mounting side
Y
X
mounting side
-:Concave
mounting side
+:Convex
Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,
"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"
Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.
3
Feb. 2011