CM150DX-24S Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
22
VGE=15 V
15
V
16
Short-
circuited
38
39
22
48
Short-
circuited
I_C
15
23/24
16
VGE=15 V
38
47
39
48
V
23/24
I_C
47
22
Short-
circuited
15
V
16
Short-
circuited
38
39
48
I_E
23/24
47
22
Short-
circuited
15
16
Short-
circuited
38
39
48
V
23/24
I_E
47
Tr1
Tr2
V_CEsat test circuit
Di1
Di2
V_EC test circuit
i_E
vGE
90 %
-V_GE
Load
0V
+ V_CC
i_C
+VGE
0V
-V_GE
RG
V_CE
VGE
iC
0A
t_{d( o n)}
t_r
t_d(off)
Switching characteristics test circuit and waveforms
0
t
90 %
10%
t_f
t
i_E
I_E
0A
Q_rr =0.5×I_rr ×t_{r r}
trr
t
I_rr
0.5×I _{r r}
t_rr, Q_rr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
I_EM
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
t_i
IGBT Turn-on switching energy
0.1×V_CC
0
0.02×ICM _t
t_i
IGBT Turn-off switching energy
0V
t
t_i
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
5
Feb. 2011