CM600DU-12NFH Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=300 V, V_GE=±15 V, R_G=2.0 Ω,
T_j =25 °C, INDUCTIVE LOAD
1000
MITSUBISHI IGBT MODULES
ç ^{CM600DU-12NFH}
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
1000
I_rr
100
t_rr
10
10
100
1000
EMITTER CURRENT I_E (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
I_C=600 A, T _j =25 °C
20
18
16
V_CC=200 V
14
12
V_CC=300 V
10
8
6
4
2
0
0
1000
2000
3000
4000
5000
GATE CHARGE Q_G (nC)
C_ies
100
10
C_oes
C_res
1
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C'=25°C
1
0.1
0.01
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
R_th(j-c')Q=53 K/kW, R_th(j-c')D=78 K/kW
TIME (S)
7
February-2011