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| CM600DU-12NFH Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 â¦,
Tj =125 °C, INDUCTIVE LOAD
1000
td(off)
td(on)
100
tf
tr
10
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 â¦, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
100
Eoff
Eon
10
Err
MITSUBISHI IGBT MODULES
ç CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC=600 A, VGE=±15 V,
Tj =125 °C, INDUCTIVE LOAD
10000
1000
td(off)
td(on)
tr
tf
100
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC/IE=600 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
100
Eoff
10
Err
Eon
1
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
6
1
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
February-2011
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