CM600DU-12NFH Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI IGBT MODULES
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CM600DU-12NFH
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HIGH POWER SWITCHING USE
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INSULATED TYPE
CM600DU-12NFH
Dual (Half-Bridge)
- 5^th generation Fast switching IGBT module -
Collector current I_C .............…............…
Collector-emitter voltage V_CES ...........…
Maximum junction temperature T_jmax ...
●Flat base Type
600A
600V
1 5 0 °C
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
APPLICATION
High freqency (30 kHz ~ 60 kHz) switching use:
Gradient anplifier, Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
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Tolerance otherwise specifiedç
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
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INTERNAL CONNECTION
Di1
Tr2
C2E1
Di2
E2
Tr1
C1
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1
February-2011