CM600DU-12NFH Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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TEST CIRCUIT AND WAVEFORMS
MITSUBISHI IGBT MODULES
ç ^{CM600DU-12NFH}
HIGH POWER SWITCHING USE
INSULATED TYPE
VGE=15 V
G1
V
Es1
Short-
circuited
G2
Es2
Tr1
C1
I_C
C2E1
Short-
circuited
G1
Es1
VGE=15 V
G2
C1
V
C2E1
I_C
Es2
E2
E2
Tr2
V_CEsat test circuit
Short-
circuited
G1
V
Es1
Short-
circuited
G2
Es2
Di1
C1
I_E
C2E1
Short-
circuited
G1
Es1
Short-
circuited
G2
C1
V
C2E1
I_E
Es2
E2
E2
Di2
V_EC test circuit
i_E
v_GE
90 %
-V _GE
Load
0V
+ V_CC
i_C
+V _GE
0V
-V _GE
R_G
vCE
v_GE
i_C
0A
t_{d (o n)}
t_r
t _{d( o ff)}
Switching characteristics test circuit and waveforms
0
t
90 %
10%
t_f
t
i_E
I_E
0A
Q_rr =0.5×I_rr ×t_{r r}
trr
t
I_rr
0.5×I _{r r}
t_rr, Q_rr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
IEM
0A
vEC
VCC
t
0.1×I_CM
0
0.1×VCC
0.1×V_CC
t
0
0.02×I_{CM t}
0V
t
t_i
t_i
t_i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
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4
February-2011