CM600DU-12NFH Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
ç ^{CM600DU-12NFH}
HIGH POWER SWITCHING USE
INSULATED TYPE
ç
RECOMMENDED OPERATING CONDITIONS (T_a=25 °C)
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
V_CC
V_GEon
R_G
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
-
300
400
V
13.5
15.0
16.5
1.0
-
10
Ω
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T_C) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (T _C ' ) and heat sink temperature (T _s ') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R _{t h( s - a)} } should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
Note.5: Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
X
bottom
3 mm
Y
bottom
-:Concave
bottom
+:Convex
Note.9: No short circuit capability is designed.
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Case Temperature (TC)
measurement point
(Base plate side)ç
Tr1/Tr2: IGBT, Di1/Di2: FWDi
3
February-2011