CM600DU-12NFH Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
ç ^{CM600DU-12NFH}
HIGH POWER SWITCHING USE
INSULATED TYPE
ç
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
Rating
Unit
V_CES
Collector-emitter voltage
G-E short-circuited
600
V
V_GES
Gate-emitter voltage
C-E short-circuited
±20
V
I_C
I_C(rms)
I_CRM
P_tot
P_tot'
IE
(Note.1)
I ^(Note.1)
E(rms)
I ^(Note.1)
ERM
Collector current
Total power dissipation
Operation ^(Note.5)
Pulse, Repetitive ^(Note.4)
TC=25 °C ^{(Note.2, 5)}
TC'=25 °C ^{(Note.3, 5)}
Emitter current
(Free wheeling diode forward current)
Operation ^(Note.5)
Pulse, Repetitive ^(Note.4)
600
400
A
1200
1130
W
2350
600
400
A
1200
T_j
Junction temperature
-
T_stg
Storage temperature
-
-40 ~ +150
-40 ~ +125
°C
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
I_GES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
0.5
μA
V_GE(th)
Gate-emitter threshold voltage
IC=60 mA, VCE=10 V
5
6
7
V
V_CEsat
Collector-emitter saturation voltage
IC=600 A , ^(Note.6)
VGE=15 V
T _j =25 °C
-
T _j =125 °C
-
2.0
2.7
V
1.95
-
C_ies
C_oes
Input capacitance
Output capacitance
VCE=10 V, G-E short-circuited
-
-
166
-
-
11
nF
C_res
Reverse transfer capacitance
-
-
6.0
Q_G
Gate charge
VCC=300 V, IC=600 A, VGE=15 V
-
3720
-
nC
t_d(on)
t_r
t_d(off)
t_f
V ^(Note.1)
EC
t (Note.1)
rr
Q (Note.1)
rr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
VCC=300 V, IC=600 A, VGE=±15 V,
-
-
RG=2.0 Ω, Inductive load
-
-
-
650
-
250
ns
-
800
-
150
I_E=600 A ^(Note.6) , G-E short-circuited
-
2.0
2.6
V
VCC=300 V, IE=600 A, VGE=±15 V,
-
-
200
ns
R_G=2.0 Ω, Inductive load
-
11
-
μC
E_on
Turn-on switching energy per pulse V_CC=300 V, I_C=I_E=600 A,
-
11
-
E_off
Turn-off switching energy per pulse V_GE=±15 V, R_G=2.0 Ω, T _j =125 °C,
-
27
-
mJ
E (Note.1)
rr
Reverse recovery energy per pulse
Inductive load
-
6.3
-
r_g
Internal gate resistance
Per switch, TC=25 °C
-
0.8
-
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Conditions
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
R_th(j-c')Q
R_th(j-c')D
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Thermal resistance ^(Note.3)
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied ^(Note.7)
Junction to case, per IGBT
Junction to case, per FWDi
Min.
Limits
Typ.
Max.
Unit
-
-
0.11
K/W
-
-
0.12
K/W
-
0.02
-
K/W
-
-
53
K/kW
-
-
78
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
M 6 screw
Mounting to heat sink M 6 screw
-
On the centerline X, Y ^(Note.8)
Min.
Limits
Typ.
Max.
Unit
3.5
3.5
4.0
4.0
4.5
4.5
N·m
-
580
-
g
-100
-
+100
μm
2
February-2011