CM600DU-12NFH Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
1200
13 V 11 V 10 V 9.5 V
V_GE=20 V
9V
15 V
8.5
1000
800
8V
600
400
7.5
200
7V
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T _j =25 °C
5
4.5
4
I_C=1200 A
3.5
I_C=600 A
3
I_C=240 A
2.5
2
1.5
1
0.5
0
0
5
10
15
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
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HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3
2.5
T _j =125 °C
2
1.5
T _j =25 °C
1
0.5
0
0
200
400
600
800
1000
1200
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited , T_j =25 °C
10000
1000
T _j =125 °C
T _j =25 °C
100
10
0
0.5
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE V_EC (V)
5
February-2011