M38503MXH Datasheet, PDF (60/86 Pages) Mitsubishi Electric Semiconductor – SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

MITSUBISHI MICROCOMPUTERS
3850 Group (Spec. H)
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
Page Program Command
This command writes the specified page (256 bytes) in the flash
memory sequentially one byte at a time. Execute the page program
command as explained here following.
(1) Transfer the “4116” command code with the 1st byte.
(2) Transfer addresses A8 to A15 and A16 to A23 (“0016”) with the 2nd
and 3rd bytes respectively.
(3) From the 4th byte onward, as write data (D0–D7) for the page (256
bytes) specified with addresses A8 to A23 is input sequentially from
the smallest address first, that page is automatically written.
__________
When reception setup for the next 256 bytes ends, the SRDY1
(BUSY) signal changes from the “H” to the “L” level. The result of the
page program can be known by reading the status register. For
more information, see the section on the status register.
SCLK
RxD
TxD
4116 ^{A8 to A16 to} data0
A15 A23
data255
SRDY1(BUSY)
Fig. 60 Timing for the page program
Erase All Blocks Command
This command erases the content of all blocks. Execute the erase all
blocks command as explained here following.
(1) Transfer the “A716” command code with the 1st byte.
(2) Transfer the verify command code “D016” with the 2nd byte. With
the verify command code, the erase operation will start and con-
tinue for all blocks in the flash memory.
__________
When block erasing ends, the SRDY1 (BUSY) signal changes from
the “H” to the “L” level . The result of the erase operation can be
known by reading the status register.
SCLK
RxD
TxD
SRDY1(BUSY)
Fig. 61 Timing for erasing all blocks
A716 D016
60