SMJ44400 Datasheet, PDF (4/21 Pages) Austin Semiconductor – 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY

DRAM
SMJ44400
FUNCTIONAL BLOCK DIAGRAM
RAS\ CAS\
W\
OE\
Timeing and Control
A0
8
Column Decode
16
A1
Sense Amplifiers
Column 2
128K Array
128K Array
Address
128K Array
R 128K Array
Buffers
O
A9
W
Data
4
16
In
D
I/O
Reg.
16
E
16
Buffers
Row
Address
Buffers
C
O
10
D
E
R
128K Array
128K Array
4 of 16
Selection
2
4
Data
Out
Reg.
10
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under “Absolute
Voltage on Vcc Supply Relative to Vss...............-1V to +7.0V ^{Maximum Ratings” may cause permanent damage to the}
Voltage Range on Any Pin Relative to Vss.........-1V to +7.0V ^{device. This is a stress rating only and functional opera-}
Short Circuit Output Current (per I/O)….......................50mA ^{tion of the device at these or any other conditions above}
Power Dissipation.................................................................1W ^{those indicated in the operation section of this specifica-}
Storage Temperature Range..........................-65°C to +150°C ^{tion is not implied. Exposure to absolute maximum rating}
Operating Temperature Range......................-55°C to +125°C ^{conditions for extended periods may affect reliability.}
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
RECOMMENDED OPERATING CONDITIONS
SYM
DESCRIPTION
MIN
V_CC Supply Voltage
4.5
V_IH High-Level Input Voltage
2.4
V_IL ^{Low-Level Input Voltage1}
-1
T_A Minimum Operating Temperature
-55
T_C Maximum Operating Case Temperature
NOM
5
MAX
5.5
6.5
0.8
125
1. The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
UNIT
V
V
V
°C
°C
SMJ44400
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
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