SMJ44400 Datasheet, PDF(12/21 Page) Austin Semiconductor – 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY

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SMJ44400 Datasheet, PDF (12/21 Pages) Austin Semiconductor – 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY

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DRAM

SMJ44400

ENHANCED-PAGE-MODE READ-CYCLE TIMING

(2)

(1)

NOTES:

1. Valid data is presented at the outputs after all access times are satisï¬ed but can go from the high-impedance state to an invalid-data state prior to the speciï¬ed access tiems as the outputs are driven when

CAS\ and OE\ are low.

2. Access time is tCPA or tAA dependent.

SMJ44400

Rev. 2.2 01/10

Micross Components reserves the right to change products or speciï¬cations without notice.

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