|
APT47GA60JD40 Datasheet, PDF (9/9 Pages) Microsemi Corporation – High Speed PT IGBT | |||
|
◁ |
Dynamic Characteristics
+18V
0V
TJ = 25°C unless otherwise speciï¬ed
Vr
diF/dt Adjust
APT6017LLL
30μH
D.U.T.
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9, Diode Test Circuit
APT47GA60JD40
trr/Qrr
Waveform
1 IF - Forward Conduction Current
2 diF/dt - Rate of Diode Current Change Through Zero Crossing.
3 IRRM - Maximum Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
2
line through IRRM and 0.25 IRRM passes through zero.
5 Qrr - Area Under the Curve Defined by IRRM and trr.
4
5
3
Figure 10, Diode Reverse Recovery Waveform and Deï¬nitions
0.25 IRRM
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
* Emitter/Anode
1.95 (.077)
2.14 (.084)
Collector/Cathode
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
Gate
Dimensions in Millimeters and (Inches)
Microsemiâs products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
|