APT47GA60JD40 Datasheet, PDF (8/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
140
120
T_J = 175°C
100
T_J = 25°C unless otherwise specified
200
60A
150
APT47GA60JD40
T_J = 125°C
V_R = 400V
80
60
T_J = 125°C
40
20
T_J = -55°C
T_J = 25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
1400
1200
T_J = 125°C
V_R = 400V
60A
1000
30A
100
15A
50
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
35
T_J = 125°C
V_R = 400V
30
60A
25
800
30A
600
400
15A
200
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
t_rr
1.0
0.8
t_rr
I_RRM
0.6
0.4
Q_rr
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
200
20
15
30A
10
15A
5
0
0 200 400 600 800 1000 1200 1400 1600
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
50
Duty cycle = 0.5
45
T_J = 175°C
40
35
30
25
20
15
10
5
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
150
100
50
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage