APT47GA60JD40 Datasheet, PDF (7/9 Pages) Microsemi Corporation – High Speed PT IGBT

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT47GA60JD40
Unit
I_F(AV)
I_F(RMS)
I_FSM
Maximum Average Forward Current (T_C = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
30
42
Amps
320
Min Type Max Unit
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Characteristic
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 125°C
Test Conditions
1.8
2.0
Volts
1.3
Min Typ Max Unit
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -100A/µs,
V_R = 30V, T_J = 25°C
-
21
-
ns
t_rr
Reverse Recovery Time
Q_rr ^{Reverse Recovery Charge}
I_RRM Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 25°C
-
105
-
-
115
-
nC
-
3
-
Amps
t_rr
Reverse Recovery Time
Q_rr ^{Reverse Recovery Charge}
I_RRM Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/µs
V_R = 400V, T_C = 125°C
-
125
-
465
-
7
-
ns
-
nC
-
Amps
t_rr
Reverse Recovery Time
-
60
-
ns
Q_rr
Reverse Recovery Charge
I_RRM Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -1000A/µs
V_R = 400V, T_C = 125°C
-
-
830
23
-
nC
-
Amps
1.40
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
Duty Factor D = ^t1/t2
0.05
SINGLE PULSE
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
RC MODEL
0.320
0.00278
Power
(watts)
0.515
0.0421
0.375
0.242
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL