APT47GA60JD40 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
150
V_GE = 15V
125
T_J= 55°C
T_J= 150°C
100
T_J= 25°C
75
T_J= 125°C
50
25
00
1
2
3
4
5
6
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
100
250μs PULSE
TEST<0.5 % DUTY
CYCLE
80
60
40
T_J= 125°C
20
T_J= 25°C
T_J= -55°C
0
0
4
2 4 6 8 10 12 14 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 94A
I_C = 47A
2
I_C = 23.5A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
350
15V 13V
10V
300
9V
250
APT47GA60JD40
200
8V
150
100
7V
50
6V
0
04
5V
8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
20
I_C = 47A
T_J = 25°C
15
V_CE = 120V
V_CE = 300V
10
V_CE = 480V
5
0
0
5
50
100 150 200 250
GATE CHARGE (nC)
FIGURE 4, Gate charge
4
3
I_C = 94A
I_C = 47A
2
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0
25 50 75
I_C = 23.5A
100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
120
100
80
60
40
20
0
25
50
75
100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature