 English |
|
|
|
|
|
|
|
| APT47GA60JD40 Datasheet, PDF (1/9 Pages) Microsemi Corporation – High Speed PT IGBT | |||
| |||
|
APT47GA60JD40
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efï¬ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
ISOTOP®
"UL Recognized"
file # E145592
APT47GA60JD40
when switching at high frequency.
Combi (IGBT and Diode)
FEATURES
⢠Fast switching with low EMI
⢠Very Low Eoff for maximum efï¬ciency
⢠Ultra low Cres for improved noise immunity
⢠Low conduction loss
⢠Low gate charge
⢠Increased intrinsic gate resistance for low EMI
⢠RoHS compliant
TYPICAL APPLICATIONS
⢠ZVS phase shifted and other full bridge
⢠Half bridge
⢠High power PFC boost
⢠Welding
⢠UPS, solar, and other inverters
⢠High frequency, high efï¬ciency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TL
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage 2
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
600
87
47
139
±30
283
139A @ 600V
-55 to 150
300
Unit
V
A
V
W
°C
Static Characteristics
TJ = 25°C unless otherwise speciï¬ed
Symbol Parameter
Test Conditions
Min Typ Max Unit
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
600
VGE = 15V,
TJ = 25°C
IC = 47A
TJ = 125°C
VGE =VCE , IC = 1mA
3
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
2.0
2.5
V
1.9
4.5
6
275
μA
3000
±100
nA
Microsemi Website - http://www.microsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese