APT47GA60JD40 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
50
40
V_GE = 15V
30
20
10 ^VCE ^{= 400V}
T_J = 25°C, or 125°C
R_G = 4.7Ω
L = 100μH
0
0
20
40
60
80
100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
R_G = 4.7Ω, L = 100μH, V_CE = 400V
80
60
40
20
T_J = 25 or 125°C,V_GE = 15V
0
0
20
40
60
80
100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5000
4000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
T_J = 125°C
3000
2000
1000
T_J = 25°C
0
0
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
15000
12000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,94A
9000
6000
E_on2,94A
3000
E_on2,47A
E_off,47A
E_off,23.5A
E_on2,23.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT47GA60JD40
200
175
V_GE =15V,T_J=125°C
150
V_GE =15V,T_J=25°C
125
V_CE = 400V
R_G = 4.7Ω
L = 100μH
100
0
20
40
60 80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140
R_G = 4.7Ω, L = 100μH, V_CE = 400V
120
T_J = 125°C, V_GE = 15V
100
80
60
T_J = 25°C, V_GE = 15V
40
20
0
0
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4000
3500
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
3000
2500
2000
T_J = 125°C
1500
1000
500
T_J = 25°C
00
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
5000
4000
V_CE = 400V
V_GE = +15V
R_G = 4.7Ω
E_on2,94A
3000
E_on2,94A
2000
1000
E_off,47A
E_off,47A
E_on2,23.5A
E_off,23.5A
0
0
25
50
75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature