APT47GA60JD40 Datasheet, PDF (5/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
10,000
C_ies
1,000
100
C_oes
C_res
10
0
100 200 300 400 500 600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT47GA60JD40
800
100
10
1
0.1 ₁
10
100
1000
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.50
0.45
0.40
D = 0.9
0.35
0.7
0.30
0.25
0.5
0.20
0.15
0.3
Note:
t1
0.10
0.1
0.05
0.05
0
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
0.1
1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
.0925 .26312 .0828
.0059
.2413
0.0802
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL