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A2F500M3G-CSG288 Datasheet, PDF (44/197 Pages) Microsemi Corporation – SmartFusion Customizable System-on-Chip (cSoC)
SmartFusion DC and Switching Characteristics
2.5 V LVCMOS
Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-
purpose 2.5 V applications.
Table 2-41 • Minimum and Maximum DC Input and Output Levels
Applicable to FPGA I/O Banks
2.5 V LVCMOS
Drive Strength
VIL
Min. Max.
V
V
VIH
Min. Max.
V
V
VOL
Max.
V
VOH
Min.
V
IOL IOH
mA mA
2 mA
–0.3 0.7
1.7
2.7
0.7
1.7 2 2
4 mA
–0.3 0.7
1.7
2.7
0.7
1.7 4 4
6 mA
–0.3 0.7
1.7
2.7
0.7
1.7 6 6
8 mA
–0.3 0.7
1.7
2.7
0.7
1.7 8 8
12 mA
–0.3 0.7
1.7
2.7
0.7
1.7 12 12
16 mA
–0.3 0.7
1.7
2.7
0.7
1.7 16 16
24 mA
–0.3 0.7
1.7
2.7
0.7
1.7 24 24
IOSL
Max.
mA1
18
18
37
37
74
87
124
IOSH
Max.
mA1
16
16
32
32
65
83
169
IIL IIH
µA2 µA2
15 15
15 15
15 15
15 15
15 15
15 15
15 15
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
Table 2-42 • Minimum and Maximum DC Input and Output Levels
Applicable to MSS I/O Banks
2.5 V LVCMOS
Drive Strength
8 mA
VIL
Min. Max.
V
V
–0.3 0.7
VIH
Min. Max.
V
V
1.7
3.6
VOL
Max.
V
0.7
VOH IOL IOH
Min.
V mA mA
1.7 8 8
IOSL
Max.
mA1
37
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 85°C junction temperature.
3. Software default selection highlighted in gray.
IOSH
Max.,
mA1
32
IIL IIH
µA2 µA2
15 15
Test Point
Datapath
35 pF
R=1K
Test Point
Enable Path
R to VCCxxxxIOBx for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
35 pF for tZH / tZHS / tZL / tZLS
35 pF for tHZ / tLZ
Figure 2-7 • AC Loading
Table 2-43 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
0
Input High (V)
2.5
Measuring Point* (V)
1.2
VREF (typ.) (V)
–
* Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points.
CLOAD (pF)
35
2-32
Revision 12