HAL800 Datasheet, PDF (23/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 800
5.5. Register Information
CLAMP-LOW
– The register range is from 0 up to 1023.
– The register value is calculated by:
Low Clamping Voltage
CLAMP-LOW =
V_DD
* 2048
CLAMP-HIGH
– The register range is from 0 up to 2047.
– The register value is calculated by:
High Clamping Voltage
CLAMP-HIGH =
V_DD
* 2048
VOQ
– The register range is from −1024 up to 1023.
– The register value is calculated by:
VOQ =
V_OQ
V_DD
* 1024
SENSITIVITY
– The register range is from −8192 up to 8191.
– The register value is calculated by:
Sensitivity
SENSITIVITY = ₂₀₄₈
MODE
– The register range is from 0 up to 7 and contains the
settings for FILTER and RANGE
ADC-READOUT
– This register is read only.
– The register range is from −8192 up to 8191.
TC and TCSQ
– The TC register range is from −31 up to 31,
– The TCSQ register range is from 0 up to 31.
Please refer Section 4.2. on page 17 for the recom-
mended values.
5.6. Programming Information
If you want to change the content of any register
(except the lock registers) you have to write the
desired value into the corresponding RAM register at
first.
If you want to permanently store the value in the
EEPROM, you have to send an ERASE command first
and a PROM command afterwards. The address within
the ERASE and PROM command is not important.
ERASE and PROM acts on all registers in parallel.
If you want to change all registers of the HAL 800, you
can send all writing commands one after each other
and send one ERASE and PROM command at the
end.
Table 5–4: Parameters for the MODE register
MODE
0
1
2
3
4
5
6
7
FILTER
0
0
0
0
1
1
1
1
−3 dB Frequency
2 kHz
2 kHz
2 kHz
2 kHz
500 Hz
500 Hz
500 Hz
500 Hz
RANGE
0
1
2
3
0
1
2
3
Magnetic Field Range
−30 mT...30 mT
−75 mT...75 mT
−90 mT...90 mT
−150 mT...150 mT
−30 mT...30 mT
−75 mT...75 mT
−90 mT...90 mT
−150 mT...150 mT
Micronas
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