HAL800 Datasheet, PDF (18/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 800
4.3. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + ∆T
At static conditions, the following equation is valid:
∆T = I_DD * V_DD * R_thJA
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I_DD and R_th, and the max. value for V_DD from the appli-
cation.
For V_DD = 5.5 V, R_th = 200 K/W and I_DD = 10 mA the
temperature difference ∆T = 11 K.
For all sensors, the junction temperature T_J is speci-
fied. The maximum ambient temperature T_Amax can be
calculated as:
T_Amax = T_Jmax −∆T
4.4. EMC and ESD
The HAL 800 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839
part 3 (Electrical transient transmission by capacitive
or inductive coupling) and part 4 (Radiated distur-
bances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
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Micronas