HAL800 Datasheet, PDF (19/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 800
5. Programming of the Sensor
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial tele-
gram on the supply voltage. The sensor answers with a
serial telegram on the output pin.
The bits in the serial telegram have a different Bit time
for the V_DD-line and the output. The Bit time for the
V_DD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The Bit time for the
output is defined through the Acknowledge Bit.
A logical 0 is coded as no voltage change within the Bit
time. A logical 1 is coded as a voltage change between
50% and 80% of the Bit time. After each bit a voltage
change occurs.
5.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 3 kinds of telegrams:
– Write a register (see Fig. 5–2)
After the AP Bit follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 5–3)
After evaluating this command the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command the sensor answers
with the Acknowledge Bit. After the delay time t_w the
supply voltage rises up to the programming voltage.
t_r
t_f
V_DDH
logical 0
t_p0
or
t_p0
V_DDL
V_DDH
logical 1
V_DDL
t_p0
t_p1
t_p1
or
t_p0
Fig. 5–1: Definition of logical 0 and 1 bit
Table 5–1: Telegram parameters
Symbol
V_DDL
V_DDH
t_r
t_f
t_p0
t_pOUT
Parameter
Supply Voltage for Low Level
during Programming
Supply Voltage for High Level
during Programming
Rise time
Fall time
Bit time on V_DD
Bit time on output pin
t_p1
V_DDPROG
t_PROG
t_rp
t_fp
t_w
Voltage Change for logical 1
Supply Voltage for
Programming the EEPROM
Programming Time for EEPROM
Rise time of programming voltage
Fall time of programming voltage
Delay time of programming voltage
after Acknowledge
Pin
Min. Typ. Max. Unit
Remarks
1
5
5.6
6
V
1
6.8
8.0
8.5
V
1
1
1
3.4
3.5
3
4
6
1, 3
50
65
1
11.95 12
0.05 ms
0.05 ms
3.6
ms
8
ms
80
%
12.1 V
t_p0 is defined through the Sync Bit
t_pOUT is defined through the
Acknowledge Bit
% of t_p0 or t_pOUT
1
95
100
105
ms
1
0.2
0.5
1
ms
1
0
1
ms
1
0.5
0.7
1
ms
Micronas
19