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HAL800 Datasheet, PDF (17/24 Pages) Micronas – Programmable Linear Hall Effect Sensor
HAL 800
4. Application Notes
4.1. Application Circuit
For EMC protection, it is recommended to add each a
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage respectively the output voltage pin. In addi-
tion, the input of the controller unit should be pulled-
down with a 4.7 kOhm resistor and a ceramic 4.7 nF
capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
VDD
4.7 nF
GND
HAL800
OUT
4.7 nF
4.7 nF
µC
4.7 kΩ
Fig. 4–1: Recommended application circuit
4.2. Temperature Compensation
The relation between the temperature coefficient of the
magnet and the corresponding TC and TCSQ codes
for a linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted,
too. For that purpose, TC and TCSQ have to be
changed to combinations that are not given in the
table. Please contact Micronas for more detailed infor-
mation.
Temperature
TC
Coefficient of
Magnet (ppm/K)
700
29
600
26
500
23
400
21
300
18
200
16
100
14
TCSQ
8
9
9
9
9
9
10
Temperature
TC
Coefficient of
Magnet (ppm/K)
0
11
−100
8
−200
6
−300
4
−400
3
−500
1
−600
−1
−700
−3
−800
−5
−900
−6
−1000
−8
−1100
−9
−1200
−11
−1300
−13
−1400
−14
−1500
−15
−1600
−17
−1700
−18
−1800
−19
−1900
−20
−2000
−22
−2100
−23
−2200
−24
−2300
−25
−2400
−26
−2500
−27
−2600
−28
−2700
−29
−2800
−30
−2900
−31
Micronas
TCSQ
10
10
11
11
12
12
13
13
14
14
15
15
16
17
17
18
18
18
19
19
20
21
21
22
22
23
23
24
24
26
17