HAL800 Datasheet, PDF (14/24 Pages) Micronas – Programmable Linear Hall Effect Sensor

HAL 800
3.7. Magnetic Characteristics
at T_J = −40 °C to +170 °C, V_DD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T_J = 25 °C and V_DD = 5 V.
Symbol
B_Offset
∆B_Offset/∆T
B_Hysteresis
SR
Parameter
Magnetic Offset
Magnetic Offset Change
due to T_J
Magnetic Hysteresis
Magnetic Slew Rate
Pin No. Min.
3
−1
−15
−20
3
−
n_meff
Magnetic RMS Broadband
3
−
Noise
f_Cflicker
Corner Frequency of 1/f Noise 3
−
f_Cflicker
Corner Frequency of 1/frms
3
−
Noise
Typ.
0
0
0
12
50
10
20
100
Max.
1
15
Unit
mT
µT/K
Test Conditions
B = 0 mT, I_OUT = 0 mA, T_J = 25 °C
B = 0 mT, I_OUT = 0 mA
20
µT
Range = 30 mT, Filter = 500 Hz
−
mT/ms Filter frequency = 500 Hz
Filter frequency = 2 kHz
−
µT
BW = 10 Hz to 2 kHz
Hz
B = 0 mT
Hz
B = 65 mT, T_J = 25 °C
3.8. Typical Characteristics
mA
20
15
I_DD
10
5
0
–5
–10
–15
–20
–15 –10 –5 0
T_A = –40 °C
T_A = 25 °C
T_A=150 °C
5 10 15 20 V
V_DD
Fig. 3–2: Typical current consumption
versus supply voltage
14
mA
10
I_{DD 8}
V_DD = 5 V
6
4
2
0
–50 0
50 100 150 200 °C
T_A
Fig. 3–3: Typical current consumption
versus ambient temperature
Micronas