MT49H32M9 Datasheet, PDF (46/76 Pages) Micron Technology – 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II

288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
Operations
Figure 21: WRITE-to-READ
T0
CK#
T1
T2
T3
T4
T5 T5n T6 T6n T7
CK
COMMAND
WRITE
NOP
READ
NOP
NOP
NOP
NOP
NOP
ADDRESS
QK#
QK
DK#
DK
QVLD
DQ
DM
Bank a,
Add n
WL = 5
Bank b,
Add n
RL = 4
DI
DO
an
bn
DON’T CARE
Notes:
1. DI an = data-in for bank a and address n.
2. DO bn = data-out from bank b and address n.
3. Two subsequent elements of each burst follow DI an and DO bn.
4. BL = 2.
5. Nominal conditions are assumed for specifications not defined.
TRANSITIONING DATA
PDF: 09005aef80a41b46/Source: 09005aef809f284b
288Mb_RLDRAM_II_CIO.Core.fm - Rev A 9/07 EN
45
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©2003 Micron Technology, Inc. All rights reserved.