EDY4016AABG-DR-F Datasheet, PDF (291/356 Pages) Micron Technology – Databus write cyclic redundancy check (CRC)

4Gb: x16 DDR4 SDRAM
Electrical Characteristics – On-Die Termination Characteristics
Table 121: ODT Voltage and Temperature Sensitivity
Parameter
dR_TTdT
dR_TTdV
Min
0
0
Max
1.5
0.15
Unit
%/°C
%/mV
ODT Timing Definitions
The reference load for ODT timings is different than the reference load used for timing
measurements.
Figure 226: ODT Timing Reference Load
CK_t, CK_c
VDDQ
DUT
DQ, DQS_t, DQS_c,
DM, TDQS_t, TDQS_c
R_TT = 50ȍ
VSSQ
Timing reference point
V_TT = V_SSQ
ODT Timing Definitions and Waveforms
Definitions for ^tADC, ^tAONAS, and ^tAOFAS are provided in the Table 122 (page 291) and
shown in Figure 227 (page 292) and Figure 229 (page 293). Measurement reference set-
tings are provided in the subsequent Table 123 (page 292).
The ^tADC for the dynamic ODT case and read disable ODT cases are represented by
t_{ADC of Direct ODT Control case.}
Table 122: ODT Timing Definitions
Parameter
Begin Point Definition
t_ADC
Rising edge of CK_t, CK_c defined by the end point of
DODTLoff
Rising edge of CK_t, CK_c defined by the end point of
DODTLon
Rising edge of CK_t, CK_c defined by the end point of
ODTLcnw
Rising edge of CK_t, CK_c defined by the end point of
ODTLcwn4 or ODTLcwn8
t_AONAS
Rising edge of CK_t, CK_c with ODT being first registered
HIGH
t_AOFAS
Rising edge of CK_t, CK_c with ODT being first registered
LOW
End Point Definition
Extrapolated point at V_RTT,nom
Extrapolated point at V_SSQ
Extrapolated point at V_RTT,nom
Extrapolated point at V_SSQ
Extrapolated point at V_SSQ
Extrapolated point at V_RTT,nom
Figure
Figure 227
(page 292)
Figure 227
(page 292)
Figure 228
(page 293)
Figure 228
(page 293)
Figure 229
(page 293)
Figure 229
(page 293)
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
291
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