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EDY4016AABG-DR-F Datasheet, PDF (264/356 Pages) Micron Technology – Databus write cyclic redundancy check (CRC)
4Gb: x16 DDR4 SDRAM
Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Figure 203: CT Type-A Input Slew Rate Definition
VIH(AC)_CTipAmin
VIH(DC)_CTipAmin
VREFCA
VIL(DC)_CTipAmax
VIL(AC)_CTipAmax
tF_CTipA
tR_CTipA
Table 88: CT Type-B Input Levels
Parameter
CTipB AC input high voltage
CTipB DC input high voltage
CTipB DC input low voltage
CTipB AC input low voltage
CTipB falling time
CTipB rising time
Symbol
VIH(AC)
VIH(DC)
VIL(DC)
VIL(AC)
tF_CTipB
tR_CTipB
Min
VREF + 300
VREF + 200
VSS
VSS11
–
–
Max
VDD1 1
VDD
VREF - 200
VREF - 300
5
5
Unit
V
V
V
V
ns
ns
Notes:
1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-B inputs: DML_n/DBIL_n, DMU_n/DBIU_n and DM_n/DBI_n.
3. VREFDQ should be 0.5 × VDD
Figure 204: CT Type-B Input Slew Rate Definition
Note
2, 3
2, 3
2, 3
2, 3
2
2
VIH(AC)_CTipBmin
VIH(DC)_CTipBmin
VREFDQ
VIL(DC)_CTipBmax
VIL(AC)_CTipBmax
tF_CTipB
tR_CTipB
Table 89: CT Type-C Input Levels (CMOS)
Parameter
CTipC AC input high voltage
CTipC DC input high voltage
CTipC DC input low voltage
Symbol
VIH(AC)_CTipC
VIH(DC)_CTipC
VIL(DC)_CTipC
Min
0.8 × VDD
0.7 × VDD
VSS
Max
VDD1
VDD
0.3 × VDD
Unit
V
V
V
Note
2
2
2
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
264
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