MT47H64M8B6-25ELDTR Datasheet, PDF (22/133 Pages) Micron Technology – 512Mb: x4, x8, x16 DDR2 SDRAM

512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
Table 6: Temperature Limits
Parameter
Symbol
Min
Max
Units
Notes
Storage temperature
Operating temperature: commercial
Operating temperature: industrial
Operating temperature: automotive
T_STG
–55
150
°C
T_C
0
85
°C
T_C
–40
95
°C
T_A
–40
85
°C
T_C
–40
105
°C
T_A
–40
105
°C
1
2, 3
2, 3 , 4
4, 5
2, 3, 4
4, 5
Notes:
1. MAX storage case temperature T_STG is measured in the center of the package, as shown
in Figure 10. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Pa-
rameters.”
2. MAX operating case temperature T_C is measured in the center of the package, as shown
in Figure 10.
3. Device functionality is not guaranteed if the device exceeds maximum T_C during
operation.
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
Figure 10: Example Temperature Test Point Location
Test point
Length (L)
0.5 (L)
0.5 (W)
Width (W)
Lmm x Wmm FBGA
Table 7: Thermal Impedance
Die Revision
F¹
Package Substrate
60-ball 2-layer
4-layer
84-ball 2-layer
4-layer
Θ JA (°C/W)
Airflow = 0m/s
71.4
53.6
65.8
50.0
Θ JA (°C/W)
Airflow = 1m/s
54.1
44.5
50.4
41.3
Θ JA (°C/W)
Airflow = 2m/s
47.5
40.5
44.3
37.7
Θ JB (°C/W) Θ JC (°C/W)
33.7
5.5
33.5
30.7
4.1
30.5
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
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