PIC16F630_06 Datasheet, PDF (94/130 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.7 DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
DC CHARACTERISTICS
Param
No.
Sym
Characteristic
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Min Typ† Max Units
Conditions
D100
Capacitive Loading Specs
on Output Pins
COSC2 OSC2 pin
—
—
15* pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101
D120
D120A
D121
CIO
ED
ED
VDRW
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
VDD for Read/Write
—
—
100K
10K
VMIN
1M
100K
—
50* pF
— E/W -40°C ≤ TA ≤ +85°C
— E/W +85°C ≤ TA ≤ +125°C
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
D122
D123
D124
TDEW Erase/Write cycle time
—
TRETD Characteristic Retention
40
TREF Number of Total Erase/Write 1M
Cycles before Refresh⁽¹⁾
5
—
10M
6 ms
— Year Provided no other specifications
are violated
— E/W -40°C ≤ TA ≤ +85°C
D130
D130A
D131
Program FLASH Memory
EP Cell Endurance
ED Cell Endurance
VPR VDD for Read
10K
1K
VMIN
100K
10K
—
— E/W -40°C ≤ TA ≤ +85°C
— E/W +85°C ≤ TA ≤ +125°C
5.5 V VMIN = Minimum operating
voltage
D132
VPEW VDD for Erase/Write
4.5
—
5.5 V
D133
D134
TPEW Erase/Write cycle time
TRETD Characteristic Retention
—
2
2.5 ms
40
—
— Year Provided no other specifications
are violated
* These parameters are characterized but not tested.
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 for additional information.
DS40039D-page 92
© 2006 Microchip Technology Inc.