PIC16F630_06 Datasheet, PDF (90/130 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.3 DC Characteristics: PIC16F630/676-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020
D021
D022
D023
D024
D025
D026
Power-down Base Current — 0.99 700 nA
(IPD)
— 1.2 770 nA
2.0 WDT, BOD, Comparators, VREF,
3.0 ^{and T1OSC disabled}
— 2.9 995 nA
— 0.3 1.5 μA
5.0
2.0 WDT Current⁽¹⁾
— 1.8 3.5 μA
3.0
— 8.4 17
μA
5.0
—
58 70
μA
3.0 BOD Current⁽¹⁾
— 109 130 μA
— 3.3 6.5 μA
5.0
2.0 Comparator Current⁽¹⁾
— 6.1 8.5 μA
3.0
— 11.5 16
μA
5.0
—
58 70
μA
2.0 CVREF Current⁽¹⁾
—
85 100 μA
3.0
— 138 160 μA
— 4.0 6.5 μA
5.0
2.0 T1 OSC Current⁽¹⁾
— 4.6 7.0 μA
3.0
— 6.0 10.5 μA
— 1.2 755 nA
5.0
3.0 A/D Current⁽¹⁾
— 0.0022 1.0 μA
5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
DS40039D-page 88
© 2006 Microchip Technology Inc.